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Gamma Irradiation-Induced chemical decomposition related bandgap en-gineering in SnO2 nanoparticles

Gamma irradiation induced chemical decomposition and related phase transformation from SnO2 nanoparticles (NPs) to SnO have been studied using X-ray diffraction (XRD), Raman spectroscopy, transmission electron microscopy (TEM) and UV-Vis spectroscopy. XRD studies shows that the SnO2 NPS are crystalline in nature with rutile structure. Crystallinity of the NPs increases with the increase of gamma irradiation doses, which is consistent with the results of transmission electron microscopy (TEM). At high gamma; irradiation doses, SnO phase appears from SnO2 matrix, which pushes the SnO2 phase towards stoichiometry. The band gap energy has been found in the range of 3.84 to 3.76 eV, larger than the band gap of bulk SnO2. The larger band gap is attributed due to small particle size, which is confirmed by TEM studies. Optical reflectance and band gap decreases with the increase of gamma irradiation doses due to creation of defects. This property of SnO2 NPs makes it suitable for use in optical devices


Auteur(s) : I. Ahmad, A. Faheem Khan, A. Shah, H. Tabassum, A. Diallo, J. Iqbal, F. I. Ezema, M. Maaza
Pages : 1850228
Année de publication : 2019
Revue : Surface Review and Letters
N° de volume : 26
Type : Article
Mise en ligne par : DIALLO Abdoulaye