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Effect of growth parameters on MgxZn1-xO films grown by metalorganic chemical vapour deposition

The need for efficient emitters and detectors operating deeper in the ultraviolet, has encouraged band gap engineering of ZnO. In particular, ZnO can be alloyed with MgO to form the ternary compound MgxZn1-xO, which has a band gap tuneable (in principle) between 3.37 eV and 7.8 eV, and which offers the possibility to create quantum heterostructures within this very promising II-VI system. Although MgxZn1-xO has been successfully grown by MOCVD, a thorough understanding of the influence of the various MOCVD growth parameters on the quality of the material has not been attained. In this study, MgxZn1-xO films are deposited on c-plane sapphire, glass, Si (100) and Si (111) by metalorganic chemical vapour deposition, using ((MeCp)2Mg), diethyl zinc ((C2H5)Zn) and either tertiary-butanol or oxygen gas as Mg, Zn and oxygen sources, respectively. A comparison of MgxZn1-xO grown on different substrates is made in terms of magnesium incorporation and film quality. The effect of using oxygen gas


Date de debut : 23 May 2010
Lieu : Hyatt Regency Lake Tahoe Incline Village, Nevada, USA
Type : Séminaire
Mise en ligne par : TALLA Kharouna