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Back Surface Recombination Velocity Modeling in White Biased Silicon Solar Cell under Steady State

In this paper, we extend the concept of back surface recombination through a study of a silicon mono facial solar cell in static regime and under polychromatic illumination. Back surface recombination velocities noted Sbe, Sbj and Sbr are determined for which respectively we derived, the power, the fill factor and the conversion efficiency, that become constant whatever the thickness of the solar cell. We have then obtained the expression of the minority carrier’s density in the base from the continuity equation. We then have determined the photocurrent density, the photo voltage, the power, the fill factor and finally the conversion efficiency.

Auteur(s) : Ousmane Diasse1, Amadou Diao1, Mamadou Wade2, Marcel Sitor Diouf1, Ibrahima Diatta1, Richard Mane1, Youssou Traore1, Gregoire Sissoko1
Pages : 189-201
Année de publication : 2018
Revue : Journal of Modern Physics
N° de volume : Volume 9
Type : Article
Mise en ligne par : DIAO Amadou