The Temperature Effect on the Recombination Velocity at the junction Initiating the Short-Circuit Condition (SFCC) of a Silicon Solar Cell under External Electric Field
In this paper, we studied the influence of the electric field and temperature on the recombination velocity at the junction initiating the short-circuit and the short-circuit current. The excess of minority carrier’s density in the base is determined from the continuity equation. The photocurrent and the short- circuit current are derived from the excess minority carrier’s density. From the photocurrent study, the recombination velocity at the junction initiating the short-circuit and the short-circuit current are determined and studied for different values of electric field and the temperature under polychromatic illumination.
Auteur(s) : Marcel Sitor DIOUF1, Ibrahima LY2, Mamadou WADE2, Ibrahima DIATTA1, Youssou TRAORE1, Mor NDIAYE1, Grégoire SISSOKO1
Année de publication : 2016
Revue : Journal of Scientific and Engineering Research
Type : Article
Mise en ligne par : NDIAYE Mor