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Investigation of structural properties of layered III-Nitride semiconductor materials by high resolution X rays diffraction.

High resolution X-ray diffraction (HRXRD) was used to investigate the structural properties of group III-nitride semiconductors, and was shown to give separable information on crystalline quality as well as on chemical composition, residual stresses, etc... Contributions from the various structural parameters to the HRXRD diagram profile, although mixed to each other, have been sorted out. Through the examples of GaN/InxAl1-xN/GaN heterostructures and AlxGa1-xN/GaN superlattices (SLs), grown by metal-organic chemical vapour deposition, it has been shown that all the structural parameters of III-nitrides are deducible from HRXRD combined with simulation methods.


Auteur(s) : S Ndiaye, A Dioum, P D Tall, K Bejtka, M Laugt, H P D Schenk
Pages : 1653-1660
Année de publication : 2012
Revue : International Journal of Physical Sciences
N° de volume : 7
Type : Article
Statut Editorial : Indexé dans les bases de la spécialité
Mise en ligne par : NDIAYE Sossé