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’Electric equivalent models of intrinsic recombination velocities of a bifacial silicon solar cell under frequency modulation and magnetic field effect

In this study, we present a theoretical study of the photogenerated charge carriers in the base of an illuminated n+-p-p+ crystalline silicon solar cell under an external magnetic field. By solving the charge carriers’ continuity equation, the dependence of diffusion coefficient and the photocurrent density on the frequency modulation and magnetic field, is studied. Hence, the study of intrinsic recombination velocities at the junction Sfo1 and rear side Sbo1 of the solar cell, leads to electric equivalent models

Auteur(s) : Nd. Thiam, A. Diao, M. Ndiaye, A. Dieng, A. Thiam, M. Sarr, A.S. Maiga and G. Sissoko
Pages : 4646-4655
Année de publication : 2012
Revue : Research Journal of Applied Sciences, Engineering and Technology
N° de volume : 4(22)
Type : Article
Mise en ligne par : DIAO Amadou