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Temperature and magnetic field effect on back surface recombination velocity in a silicon solar cell under white modulated illumination

Back surface recombination velocity of excess minority carriers in a monofacial silicon solar cell, is expressed as temperature, magnetic field, and frequency dependent. With Boode and Niquyst diagrams help, results are obtained and analyzed.

Auteur(s) : Mint Sidihanena Selma, Ndeye Thiam, Mor Ndiaye, Youssou Traore, Ibrahima Diatta, Marcel Sitor Diouf, Oulimata Mballo, Masse Samba Diop and Gregoire Si
Année de publication : 2019
Revue : ARPN Journal of Engineering and Applied Sciences
Type : Article
Mise en ligne par : NDIAYE Mor